advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 30v simple drive requirement r ds(on) 12m fast switching characteristic i d 54a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 3 mj i ar avalanche current a t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.2 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice ap62t03gh/j parameter rating rohs-compliant product drain-source voltage 30 gate-source voltage + 20 continuous drain current 54 linear derating factor 0.31 storage temperature range continuous drain current 38 pulsed drain current 1 120 20 20 total power dissipation 47 -55 to 175 1 thermal data parameter maximum thermal resistance, junction-ambient (pcb mount) 4 200903124 operating junction temperature range -55 to 175 g d s to-252(h) g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s to-251(j)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 12 m ? v gs =4.5v, i d =15a - - 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 20 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v, v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =20a - 11.5 18 nc q gs gate-source charge v ds =20v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6.8 - nc t d(on) turn-on delay time 2 v ds =15v - 6 - ns t r rise time i d =20a - 56 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 21.6 - ns t f fall time r d =0.75 -7- ns c iss input capacitance v gs =0v - 750 1200 pf c oss output capacitance v ds =25v - 190 - pf c rss reverse transfer capacitance f=1.0mhz - 144 - pf r g gate resistance f=1.0mhz - 2 3 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =20a, v gs =0 v , - 30 - ns q rr reverse recovery charge di/dt=100a/s - 21 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =25v , l=0.1mh , r g =25 , i as =20a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap62t03gh/j 2 4.surface mounted on 1 in 2 copper pad of fr4 board
ap62t03gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 20 40 60 80 100 012345678 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 175 o c 10v 7.0v 5.0v 4.5v v g =3.0v 5 15 25 35 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =15a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 25 100 175 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0 4 8 12 16 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.4 0.6 0.8 1 1.2 1.4 -50 25 100 175 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 ap62t03gh/j q v g 4.5v q gs q gd q g charge 0 4 8 12 16 0 4 8 121620242832 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =2 0 v v ds =25v i d =20a 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 30 60 90 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =175 o c t j =25 o c v ds =5v 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
|
